Initiated PECVD of Organosilicon Coatings: A New Strategy to Enhance Monomer Structure Retention

被引：32

作者：

Coclite, Anna Maria ^{[1
]}

Gleason, Karen K. ^{[1
]}

机构：

[1] MIT, Dept Chem Engn, Cambridge, MA 02139 USA

来源：

PLASMA PROCESSES AND POLYMERS | 2012年 / 9卷 / 04期

关键词：

deposition kinetics; FT-IR; initiated PECVD; organosilicon precursors; structure retention; CHEMICAL-VAPOR-DEPOSITION; PLASMA POLYMERIZATION; THIN-FILMS; METHACRYLATE); ACRYLATES); ICVD;

D O I：

10.1002/ppap.201100167

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

A new deposition method, initiated PECVD (iPECVD), is proposed for the formation of organosilicon polymers with enhanced monomer structure retention compared to conventional PECVD. The quasi-selective fragmentation of an initiator is driven by a low power plasma discharge, as opposed to using a hot filament for initiator decomposition as in a standard, plasma-free initiated CVD (iCVD). The weak peroxide bond (O?O) in the initiator permits the formation of radical species at very low plasma power density (0.07?W?.?cm-2). Kinetic analysis of the deposition process indicates that the film formation rate follows the Arrhenius law, similarly to other iCVD process from organosilicon monomers.

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收藏

页码：425 / 434

页数：10

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