Growth of SrTiO3 and BaTiO3 thin films by atomic layer deposition

被引：142

作者：

Vehkamäki, M ^{[1
]}

Hatanpää, T ^{[1
]}

Hänninen, T ^{[1
]}

Ritala, M ^{[1
]}

Leskelä, M ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 10期

关键词：

D O I：

10.1149/1.1390884

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

SrTiO3 and BaTiO3 thin films were deposited by atomic layer deposition making use of a novel class of strontium and barium precursors, i.e., their cyclopentadienyl compounds, together with titanium tetraisopropoxide and water. SrTiO3 films were grown at 325 degrees C from strontium bis(triisopropylcyclopentadienyl) and BaTiO3 at 275 degrees C from barium bis(pentamethylcyclopentadienyl). After annealing in air at 500 degrees C, permittivities of 180 and 165 were measured for SrTiO3 and BaTiO3, respectively. The films showed excellent conformality and complete filling of test trench structures. (C) 1999 The Electrochemical Society. S1099-0062(99)05-021-X. All rights reserved.

引用

页码：504 / 506

页数：3

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