(Ba,Sr)TiO3 thin films for ultra large scale dynamic random access memory.: A review on the process integration

被引：126

作者：

Hwang, CS ^{[1
]}

机构：

[1] Samsung Elect, Semicond R&D Ctr, Yongin 449900, Kyungki Do, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1998年 / 56卷 / 2-3期

关键词：

(Ba; Sr)TiO3; DRAM; integration; electrodes; deposition;

D O I：

10.1016/S0921-5107(98)00233-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Integration processes of the (Ba,Sr)TiO3, (BST) capacitors for the next-generation dynamic random access memories (DRAMs) are reviewed. Various integration schemes utilizing different processes, different electrode materials and structures are reviewed from the point of view of the mass-production compatible process. Integration issues, mostly related to the electrode and the barrier material and their fabrication techniques, are described. The current status and the problems of the two most viable techniques for the BST deposition, sputtering and metal-organic chemical vapor deposition (MOCVD), are comparatively described. Plate electrode technologies with the back-end processing issues are also briefly described, and some valuable experimental results are presented to show the feasibility of the BST capacitor. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：178 / 190

页数：13

共 25 条

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