CURRENT-VOLTAGE CHARACTERISTICS OF ELECTRON-CYCLOTRON-RESONANCE SPUTTER-DEPOSITED SRTIO3 THIN-FILMS

被引：78

作者：

FUKUDA, Y

AOKI, K

NUMATA, K

NISHIMURA, A

机构：

[1] ULSI Development Sz Productization, Texas Instruments Japan Ltd, Inashiki, Ibaraki, 300-04, 2350 Kihara, Miho-mura

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 9B期

关键词：

ECR SPUTTERING; SRTIO3; LEAKAGE CURRENT MECHANISMS; ABSORPTION CURRENT; DIELECTRIC RELAXATION; SCHOTTKY EMISSION;

D O I：

10.1143/JJAP.33.5255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-voltage characteristics of SrTiO3 thin films prepared on Pt electrodes by electron-cyclotron-resonance sputtering have been studied. The leakage current characteristics of the films show an ohmiclike conduction for electric field strengths lower than about 1 MV/cm, while the leakage current for higher electric field strengths is limited by Schottky emission. These ohmiclike leakage characteristics in the low-electric-field region show strong dependences on the measurement conditions, namely, the values of voltagestep and measurement delaytime in the conventional stepwise current-voltage ramps. This result is attributed to the absorption current due to the dielectric relaxation phenomena of the SrTiO3 capacitor. The overall current-voltage characteristics can be explained by Schottky emission from the Pt electrode.

引用

页码：5255 / 5258

页数：4

共 13 条

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