A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes

被引：166

作者：

Hwang, CS ^{[1
]}

Lee, BT ^{[1
]}

Kang, CS ^{[1
]}

Kim, JW ^{[1
]}

Lee, KH ^{[1
]}

Cho, HJ ^{[1
]}

Horii, H ^{[1
]}

Kim, WD ^{[1
]}

Lee, SI ^{[1
]}

Roh, YB ^{[1
]}

Lee, MY ^{[1
]}

机构：

[1] Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.366595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical conduction mechanisms for Pt/(Ba0.5Sr0.5)TiO3 (BST)/Pt, IrO2/BST/IrO2, and Pt/BST/IrO2 capacitors were studied. The Pt/BT/Pt capacitor shows a Schottky emission behavior with interface potential barrier heights of about 1.5-1.6 eV. The barrier height is largely determined by the surface electron trap states of the BST. The IrO2/BST interface shows an ohmic contact nature due to the elimination of the surface trap states as the result of the formation of strong chemical bonds between the IrO2 and BST which results in the Poole-Frenkel emission conduction mechanism. Pt/BST/IrO2 capacitor shows Schottky emission behavior and a positive temperature coefficient of resistivity (PTCR) effect depending on the bias polarity. The electron trap states at the Pt/PST interface and the positive space charges within the carrier depletion layer result in the PTCR effect. (C) 1998 American Institute of Physics. [S0021-8979(98)05307-9].

引用

页码：3703 / 3713

页数：11

共 38 条

[1]

Al-Shareef H. N., 1995, Science and Technology of Electroceramic Thin Films. Proceedings of the NATO Advanced Research Workshop, P133

[2]

[Anonymous], COMMUNICATION

[3] DC ELECTRICAL DEGRADATION OF PEROVSKITE-TYPE TITANATES .3. A MODEL OF THE MECHANISM [J].

BAIATU, T ;

WASER, R ;

HARDTL, KH .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (06) :1663-1673

[4] LEAKAGE AND INTERFACE ENGINEERING IN TITANATE THIN-FILMS FOR NONVOLATILE FERROELECTRIC MEMORY AND ULSI DRAMS [J].

CHEN, X ;

KINGON, AI ;

ALSHAREEF, HN ;

BELLUR, KR ;

GIFFORD, K ;

AUCIELLO, O .

INTEGRATED FERROELECTRICS, 1995, 7 (1-4) :291-306

[5]

Cheol Seong Hwang, 1996, Integrated Ferroelectrics, V13, P157, DOI 10.1080/10584589608013090

[6]

CHO HJ, 1997, JPN J APPL PHYS PT 1, V36, P197

[7] ELECTRICAL-PROPERTIES OF PARAELECTRIC (PB0.72LA0.28)TIO3 THIN-FILMS WITH HIGH LINEAR DIELECTRIC PERMITTIVITY - SCHOTTKY AND OHMIC CONTACTS [J].

DEY, SK ;

LEE, JJ ;

ALLURI, P .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (6A) :3142-3152

[8]

DEY SK, 1995, INTEGR FERROELECTR, V7, P715

[9] Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories [J].

Dietz, GW ;

Schumacher, M ;

Waser, R ;

Streiffer, SK ;

Basceri, C ;

Kingon, AI .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2359-2364

[10]

Fazan P. C., 1994, Integrated Ferroelectrics, V4, P247, DOI 10.1080/10584589408017028

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