LEAKAGE AND INTERFACE ENGINEERING IN TITANATE THIN-FILMS FOR NONVOLATILE FERROELECTRIC MEMORY AND ULSI DRAMS

被引：34

作者：

CHEN, X ^{[1
]}

KINGON, AI ^{[1
]}

ALSHAREEF, HN ^{[1
]}

BELLUR, KR ^{[1
]}

GIFFORD, K ^{[1
]}

AUCIELLO, O ^{[1
]}

机构：

[1] MCNC,DIV ELECTR TECHNOL,RES TRIANGLE PK,NC 27709

来源：

INTEGRATED FERROELECTRICS | 1995年 / 7卷 / 1-4期

关键词：

D O I：

10.1080/10584589508220240

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The leakage behavior of Pb(Zr,Ti)O-3 PZT and (Ba,Sr)TiO3 (BST) thin films has been studied. The leakage behavior is dependent upon the bottom electrode. PZT films on RuO2 bottom electrodes display a large leakage, predominantly ohmic in behavior, which we have shown to be PZT microstructure-controlled. The leakage of PZT and BST films on Pt display Schottky emission characteristics which is controlled by the film/electrode interface. In the case of PZT films, we have shown that several methods can be utilized to successfully lower the RuO2/PZT/RuO2 system leakage, while retaining the long term performance. These methods include pre-annealing of RuO2 bottom electrode prior to PZT film deposition; addition of buffer layer between RuO2 and PZT film; and PZT film growth via in-situ ion beam sputter-deposition.

引用

页码：291 / 306

页数：16

共 13 条

[1] ALSHAREEF HN, 1994, UNPUB APPLIED PHYSIC
[2] ALSHAREEF HN, 1993, 8TH P INT M FERR MAR
[3] Bellur KR, 1992, P 8 IEEE INT S APPL, P448
[4] Chen X., 1993, Integrated Ferroelectrics, V3, P355, DOI 10.1080/10584589308216691
[5] CHEN X, 1994, IN PRESS INTEGRATED
[6] FAZAN P, 1993, 5TH P INT S INT FERR
[7] KINGON A, 1991, FERROELECTRICS, V116, P35, DOI 10.1080/00150199108007928a
[8] KIRLIN P, 1994, 6TH INT S INT FERR M
[9] ELECTRICAL-PROPERTIES OF STRONTIUM-TITANATE THIN-FILMS BY MULTIION-BEAM REACTIVE SPUTTERING TECHNIQUE
PENG, CJ
HU, H
KRUPANIDHI, SB
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (08) : 1038 - 1040
[10] EXCIMER LASER ABLATED STRONTIUM-TITANATE THIN-FILMS FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATIONS
ROY, D
PENG, CJ
KRUPANIDHI, SB
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (20) : 2478 - 2480

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