Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation

被引：6

作者：

Myasnikov, AM

Obodnikov, VI

Seryapin, VG

Tishkovskii, EG

Fomin, BI

Cherepov, EI

机构：

[1] Institute of Semiconductor Physics, Siberian Br. Russ. Acad. of Sci.

来源：

SEMICONDUCTORS | 1997年 / 31卷 / 03期

关键词：

Silicon; Boron; Magnetic Material; Electromagnetism; Cluster Process;

D O I：

10.1134/1.1187127

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The temperature range in which oscillating impurity distributions are formed in heavily boron-doped silicon irradiated with boron ions B+ is found. It is hypothesized that the effect is associated with boron clustering processes which proceed more efficiently in the region of the maximum of the implanted impurity distribution and at the boundaries of the ion irradiation region. (C) 1997 American Institute of Physics.

引用

页码：279 / 282

页数：4

共 9 条

[1]

BORISENKO VE, 1987, PHYS STATUS SOLIDI A, V101, P123, DOI 10.1002/pssa.2211010113

[2]

DOWSETT MG, 1988, P 6 INT C SIMS 6, P275

[3]

Fedina L. I., 1990, Soviet Physics - Solid State, V32, P33

[4]

Hofker W. K., 1973, Applied Physics, V2, P265, DOI 10.1007/BF00889509

[5]

MYASNIKOV AM, 1994, JETP LETT+, V60, P102

[6] HIGH-CONCENTRATION EFFECTS OF ION-IMPLANTED BORON IN SILICON [J].

RYSSEL, H ;

MULLER, K ;

HABERGER, K ;

HENKELMANN, R ;

JAHNEL, F .

APPLIED PHYSICS, 1980, 22 (01) :35-38

[7]

RYSSEL H, 1978, IONENIMPLANTATION

[8]

WATKINS GD, 1964, RAD DAMAGE SEMICONDU, P97

[9]

WATKINS GD, 1975, I PHYS C SER, V23, P1

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