HIGH-CONCENTRATION EFFECTS OF ION-IMPLANTED BORON IN SILICON

被引：73

作者：

RYSSEL, H

MULLER, K

HABERGER, K

HENKELMANN, R

JAHNEL, F

机构：

来源：

APPLIED PHYSICS | 1980年 / 22卷 / 01期

关键词：

D O I：

10.1007/BF00897929

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：35 / 38

页数：4

共 14 条

[1]

ARMIGLIATO A, 1977, SEMICONDUCTOR SILICO

[2]

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[3]

Hofker W. K., 1973, Applied Physics, V2, P265, DOI 10.1007/BF00889509

[4] BORON IMPLANTATIONS IN SILICON - COMPARISON OF CHARGE CARRIER AND BORON CONCENTRATION PROFILES [J].

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WERNER, HW ;

OOSTHOEK, DP ;

KOEMAN, NJ .

APPLIED PHYSICS, 1974, 4 (02) :125-133

[5]

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[6]

KARATSYNBA AP, 1973, P INT C RAD DAMAGE D

[7]

MAEKAWA S, 1963, J PHYS SOC JPN, V19, P253

[8] DETERMINATION OF LOW-DOSE CONCENTRATION PROFILES IN SOLIDS BY MEANS OF (N,P) AND (N,ALPHA) REACTIONS [J].

MULLER, K ;

HENKELMANN, R ;

BIERSACK, JP ;

MERTENS, P .

JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1977, 38 (1-2) :9-17

[9]

PRINKE G, UNPUBLISHED

[10] CHARACTERIZATION OF INCOMPLETE ACTIVATION OF HIGH-DOSE BORON IMPLANTS IN SILICON [J].

SCHWETTM.FN .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1918-1920

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