BORON IMPLANTATIONS IN SILICON - COMPARISON OF CHARGE CARRIER AND BORON CONCENTRATION PROFILES

被引：72

作者：

HOFKER, WK ^{[1
]}

WERNER, HW ^{[1
]}

OOSTHOEK, DP ^{[1
]}

KOEMAN, NJ ^{[1
]}

机构：

[1] NAAMLOZE VENNOOTSCHAP PHILIPS GLOEILAMPEN FABRIEKEN,PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS | 1974年 / 4卷 / 02期

关键词：

D O I：

10.1007/BF00884267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：125 / 133

页数：9

共 21 条

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[5] EISEN FH, 1969, 1969 P INT C AT COLL, P111
[6] FISTUL VI, 1968, HEAVILY DOPED SEMICO
[7] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON
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[J]. APPLIED PHYSICS LETTERS, 1970, 16 (08) : 313 - +
[8] Hofker W.K., 1973, APPL PHYS, V2, P165
[9] HOFKER WK, 1973, 1972 INT C ION IMPL, P133
[10] HOFKER WK, 1973, RADIAT EFF, V17, P83