Fabrication of sub-0.5 mu m diameter cobalt dots on silicon substrates and photoresist pedestals on 50cmx50cm glass substrates using laser interference lithography

We have fabricated arrays of 120-nm-diam cobalt dot masks on 300 nm centers using laser interference lithography. The density of the cobalt dot arrays is >10(9) dots/cm(2). The standard deviation of the average cobalt dot diameter is 7.4% over a 5-cm-diam silicon substrate. Single crystal silicon pedestals were formed using a chrome dot mask array to demonstrate that these subquarter micrometer features can be used to fabricate high density self-aligned gated field emitter arrays. We have exposed uniform photoresist pedestals on 50 cm X 50 cm glass substrates using laser interference lithography to demonstrate that this technique can be scaled to expose large areas. The base diameter of the photoresist pedestals is 330 nm and the height is 250 nm. The center-to-center spacing is 670 nm. The standard deviation of the base diameter of the photoresist pedestals is 3% over an 8 mu m X 8 mu m region. (C) 1996 American Vacuum Society.