Use of x-ray microbeams for cross-section depth profiling of MeV ion-implantation-induced defect clusters in Si

We have used submicron-resolution synchrotron x-ray beams to study the size, type, and depth distribution of ion-implantation-induced defect clusters in Si. A 0.65 mu m resolution x-ray beam, generated using Fresnel zone plate focusing optics, was used to study (001)-oriented Si implanted at 300 degrees C with 10 MeV Si ions. Diffuse scattering measurements were made near the (220) Bragg reflection, as a function of depth on a (110) cross-sectioned sample, with a 0.65 mu m depth resolution. The microbeam focusing optics and the depth-resolved scattering measurements are discussed, and an analysis of the intensity and lineshape of the diffuse scattering is presented in terms of existing models of vacancy and interstitial clusters in Si. (C) 1999 American Institute of Physics. [S0003-6951(99)03144-7].