DEFECT DISTRIBUTION IN ION-IMPLANTED SILICON - A MONTE-CARLO SIMULATION

被引:75
作者
MAZZONE, AM
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 95卷 / 01期
关键词
D O I
10.1002/pssa.2210950118
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:149 / 154
页数:6
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