Electronic structure calculations of lead chalcogenides PbS, PbSe, PbTe

被引:150
作者
Lach-hab, M [1 ]
Papaconstantopoulos, DA [1 ]
Mehl, MJ [1 ]
机构
[1] George Mason Univ, Sch Computat Sci & Informat, Fairfax, VA 22030 USA
关键词
chalcogenides; electronic structure; elastic properties;
D O I
10.1016/S0022-3697(01)00237-2
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this work, we have extended our study of the mechanical properties and the electronic structure of PbTe to include other Pb chalcogenide compounds (PbSe, PbS). The calculations were performed self-consistently using the scalar-relativistic full-potential linearized augmented plane wave method. Both the local density approximation (LDA) and the generalized gradient approximation (GGA) to density-functional theory were applied. The equilibrium lattice constants and the bulk modulus of a number of structures (NaCl, CsCl, ZnS) were calculated as well as the elastic constants for the structures (NaCl, CsCl). The NaCl structure is found to be the most stable one among all the three phases considered. We have found that the GGA predicts the elastic constants in good agreement with experimental data. Both the LIDA and GGA were successful in predicting the location of the band gap at the L point of the Brillouin zone but they are inconclusive regarding the value of the band-gap width. To resolve the issue of the gap, we performed Slater-Koster (SK) tight-binding calculations, including the spin-orbit coupling in the SK Hamiltonian. The SK results that are based on our GGA calculations give the best agreement with experiment. Results are reported for the pressure dependence of the energy gap of these compounds in the NaCl structure. The pressure variation of the energy gap indicates a transition to a metallic phase at high pressure. Band structure calculations in the CsCl structure show a metallic state for all compounds. The electronic band structure in the ZnS phase shows an indirect band gap at the W and X point of the Brillouin zone. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:833 / 841
页数:9
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