Influence of secondary electron detection efficiency on controllability of dopant ion number in single ion implantation

被引：23

作者：

Shinada, T

Ishikawa, A

Fujita, M

Yamashita, K

Ohdomari, I

机构：

[1] Waseda Univ, Sch Sci & Engn, Dept Elect Informat & Commun Engn, Shinjuku Ku, Tokyo 1698555, Japan

[2] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, Tokyo 1690051, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 6A期

关键词：

single ion implantation; fluctuation; focused ion beam; chopping; secondary electron detection;

D O I：

10.1143/JJAP.38.3419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The single ion implantation (SII) technique has been developed for the purpose of suppressing the fluctuation of the dopant ion number in semiconductor fine structures. It is based on a focused ion beam with a chopping electrode for the extraction of single ions, which enables implanting of dopant atoms one by one into a target. The influence of secondary electron detection efficiency, which is the key technology in SII, on the controllability of ion number has been investigated in this study. The measured sheet electron concentration coincides well with that estimated by taking the detection efficiency into account.

引用

页码：3419 / 3421

页数：3

共 12 条

[1]

HANSEN SE, 1993, SUPREM IVGS 2 DIMENS

[2] Development of single-ion implantation - Controllability of implanted ion number [J].