Bipolaron anisotropic flat bands, Hall mobility edge, and metal-semiconductor duality of overdoped high-T-c oxides

被引：132

作者：

Alexandrov, AS ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,INTERDISCIPLINARY RES CTR SUPERCONDUCT,CAMBRIDGE CB3 0HE,ENGLAND

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.53.2863

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hole bipolaron band structure with two flat anisotropic bands is derived for oxide superconductors. Strong anisotropy leads to one-dimensional localization in a random field which explains the metal-like value of the Hall effect and the semiconductorlike doping dependence of resistivity of overdoped oxides. Doping dependence of T-c and lambda(H)(0) as well as the low-temperature dependence of resistivity, of the Hall effect, H-c2(T) and robust features of angle-resolved photoemission spectroscopy of several high-T-c copper oxides are explained.

引用

页码：2863 / 2869

页数：7

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