HALL-EFFECT AND RESISTIVITY OF HIGH-T(C) OXIDES IN THE BIPOLARON MODEL

被引：98

作者：

ALEXANDROV, AS

BRATKOVSKY, AM

MOTT, NF

机构：

[1] Interdisciplinary Research Centre in Superconductivity, University of Cambridge, Cambridge, CB3 0HE, Madingley Road

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.72.1734

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We discuss the Hall effect and resistivity above T(c), using a variant of the bipolaron theory which takes into account Anderson localization of the bosons by disorder. The model supposes that R(H) = 1/2en(b)C, where n(b) is the number of delocalized carriers. Temperature and doping dependences of rho, R(H), cot THETA(H), and the ''spin'' gap in YBa2Cu3O7-delta are explained.

引用

页码：1734 / 1737

页数：4

共 23 条

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