A normal incidence X-ray standing wave study of sulphur adsorption on InP(110)

被引：9

作者：

Johal, TK

Finetti, P

Dhanak, VR

Robinson, AW

Patchett, A

Zahn, DRT

McGrath, R

机构：

[1] UNIV LIVERPOOL,INTERDISCIPLINARY RES CTR SURFACE SCI,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND

[2] TU CHEMNITZ ZWICKAU,FACHBEREICH PHYS,D-9022 CHEMNITZ,GERMANY

[3] UNIV LIVERPOOL,DEPT PHYS,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND

来源：

APPLIED SURFACE SCIENCE | 1996年 / 104卷

关键词：

D O I：

10.1016/S0169-4332(96)00154-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A normal incidence X-ray standing wave (NIXSW) study of room temperature in-situ S adsorption on InP(110) is described. The S atom XSW profile was measured by detecting S 1s photoemission yield for the (220) Bragg reflection. The average perpendicular distance of the S atoms from the InP(110) surface was determined to be 1.95 +/- 0.02 Angstrom. The coherent fraction f(c) was found to be 0.67 +/- 0.02, which upon annealing to 270 degrees C increased to 0.82 +/- 0.02. A (1 x 1) low energy diffraction (LEED) pattern was observed in all cases. Models for the adsorption geometry are discussed.

引用

页码：257 / 261

页数：5

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