DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V SEMICONDUCTOR EPITAXIAL LAYERS

被引：146

作者：

GRANDJEAN, N ^{[1
]}

MASSIES, J ^{[1
]}

ETGENS, VH ^{[1
]}

机构：

[1] MENJS,CEA,CNRS,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.69.796

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is demonstrated that the concept of surfactant applies to the epitaxial growth of highly strained III-V semiconductors. The pseudomorphic growth regime of InAs on GaAs(001) is extended from 1.5 to 6 monolayers by the use of Te as surfactant. This delayed plastic relaxation of the strain is correlated with the modification of the growth mode via surface energy minimization.

引用

页码：796 / 799

页数：4

共 15 条

[1] PASSIVATION OF GAAS(001) SURFACES BY INCORPORATION OF GROUP-VI ATOMS - A STRUCTURAL INVESTIGATION
CHAMBERS, SA
SUNDARAM, VS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 2256 - 2262
[2] SURFACTANTS IN EPITAXIAL-GROWTH
COPEL, M
REUTER, MC
KAXIRAS, E
TROMP, RM
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (06) : 632 - 635
[3] INFLUENCE OF SURFACTANTS IN GE AND SI EPITAXY ON SI(001)
COPEL, M
REUTER, MC
VONHOEGEN, MH
TROMP, RM
[J]. PHYSICAL REVIEW B, 1990, 42 (18): : 11682 - 11689
[4] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100)
EAGLESHAM, DJ
CERULLO, M
[J]. PHYSICAL REVIEW LETTERS, 1990, 64 (16) : 1943 - 1946
[5] GLAS F, 1987, INT PHYS C SER, V87, P71
[6] ADSORPTION OF TE ON GAAS(100)
GOBIL, Y
CIBERT, J
SAMINADAYAR, K
TATARENKO, S
[J]. SURFACE SCIENCE, 1989, 211 (1-3) : 969 - 978
[7] HOEGEN MH, 1991, PHYS REV LETT, V67, P1130
[8] 1ST STAGES OF THE MBE GROWTH OF INAS ON (001)GAAS
HOUZAY, F
GUILLE, C
MOISON, JM
HENOC, P
BARTHE, F
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 67 - 72
[9] GROWTH MODE AND STRAIN RELAXATION DURING THE INITIAL-STAGE OF INXGA1-XAS GROWTH ON GAAS(001)
LENTZEN, M
GERTHSEN, D
FORSTER, A
URBAN, K
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (01) : 74 - 76
[10] MONO-CRYSTALLINE ALUMINUM OHMIC CONTACT TO N-GAAS BY H2S ADSORPTION
MASSIES, J
CHAPLART, J
LAVIRON, M
LINH, NT
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 693 - 695

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