1ST STAGES OF THE MBE GROWTH OF INAS ON (001)GAAS

被引：144

作者：

HOUZAY, F

GUILLE, C

MOISON, JM

HENOC, P

BARTHE, F

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90367-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：67 / 72

页数：6

共 28 条

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[3]

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[7] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THIN GAAS/INAS(100) MULTIPLE QUANTUM WELL STRUCTURES [J].

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[8]

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[9] THE MORPHOLOGY AND ELECTRICAL-PROPERTIES OF HETEROEPITAXIAL INAS PREPARED BY MBE [J].

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[10] OPTICAL STUDY OF MBE GROWN (INAS)M(GAAS)N SUPERLATTICE ALLOY ON GAAS AND OF INXGA(1-X)AS/INYGA(1-Y)AS STRUCTURES ON INP [J].

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