ADSORPTION OF TE ON GAAS(100)

被引:42
作者
GOBIL, Y [1 ]
CIBERT, J [1 ]
SAMINADAYAR, K [1 ]
TATARENKO, S [1 ]
机构
[1] CEN,DEPT RECH FONDAMENTALE,SPH,PSC,F-38041 GRENOBLE,FRANCE
关键词
D O I
10.1016/0039-6028(89)90863-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:969 / 978
页数:10
相关论文
共 14 条
  • [1] SURFACE PHASES OF GAAS(100) AND ALAS(100)
    BACHRACH, RZ
    BAUER, RS
    CHIARADIA, P
    HANSSON, GV
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 797 - 801
  • [2] CHAMI A, COMMUNICATION
  • [3] ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF GAAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY
    CHIANG, TC
    LUDEKE, R
    AONO, M
    LANDGREN, G
    HIMPSEL, FJ
    EASTMAN, DE
    [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4770 - 4778
  • [4] CIBERT J, IN PRESS
  • [5] MODEL FOR HETEROEPITAXIAL GROWTH OF CDTE ON (100) ORIENTED GAAS SUBSTRATE
    COHENSOLAL, G
    BAILLY, F
    BARBE, M
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1519 - 1521
  • [6] Cornet J., 1973, Journal of Non-Crystalline Solids, V12, P85, DOI 10.1016/0022-3093(73)90056-2
  • [7] CDTE-GAAS(100) INTERFACE - MBE GROWTH, RHEED AND XPS CHARACTERIZATION
    FAURIE, JP
    HSU, C
    SIVANANTHAN, S
    CHU, X
    [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 473 - 482
  • [8] SURFACE-STRUCTURE OF GAAS WITH ADSORBED TE
    FELDMAN, RD
    AUSTIN, RF
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (15) : 954 - 956
  • [9] GAAS(001)-C (4X4) - A CHEMISORBED STRUCTURE
    LARSEN, PK
    NEAVE, JH
    VANDERVEEN, JF
    DOBSON, PJ
    JOYCE, BA
    [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4966 - 4977
  • [10] STUDY OF THE INITIAL-STAGES OF GROWTH OF CDTE ON (001) GAAS
    MAR, HA
    SALANSKY, N
    CHEE, KT
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 898 - 900