Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance

被引：54

作者：

Gritsenko, VA

Zhuravlev, KS

Milov, AD

Wong, H ^{[1
]}

Kwok, RWM

Xu, JB

机构：

[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Peoples R China

[2] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[3] Russian Acad Sci, Inst Kinet & Combust, Siberian Branch, Novosibirsk 630090, Russia

[4] Chinese Univ Hong Kong, Mat Sci & Technol Res Ctr, Shatin, NT, Peoples R China

[5] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, NT, Peoples R China

来源：

THIN SOLID FILMS | 1999年 / 353卷 / 1-2期

关键词：

silicon nitride; nanostructures; photoluminescence; electron spin resonance;

D O I：

10.1016/S0040-6090(99)00180-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence (PL) properties of SiNx (0.51 < x < 1.3) films are studied. A visible luminescence near the UV region is observed and the PL intensity and peak positions are found to be governed by the excess silicon composition. A large scale potential fluctuation due to the spatial variation of chemical composition in SINx is proposed to explain these observations, In addition, non-radiative recombination centers (N3Si ., N2SiSi ., NSi2Si ., or Si3Si .), which have prominent effect on the luminescence intensity, are also studied using electron spin resonance (ESR) measurement. The ESR results suggest that the excess silicon content should not be too high in order to have a strong PL. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：20 / 24

页数：5

共 26 条

[1] ELECTROLUMINESCENCE STUDIES IN SILICON DIOXIDE FILMS CONTAINING TINY SILICON ISLANDS
DIMARIA, DJ
KIRTLEY, JR
PAKULIS, EJ
DONG, DW
KUAN, TS
PESAVENTO, FL
THEIS, TN
CUTRO, JA
BRORSON, SD
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 401 - 416
[2] Gritsenko V.A., 1988, SILICON NITRIDE ELEC
[3] Wigner crystallization of electrons and holes in amorphous silicon nitride. Antiferromagnetic ordering of localized electrons and holes as a result of a resonance exchange interaction
Gritsenko, VA
Milov, AD
[J]. JETP LETTERS, 1996, 64 (07) : 531 - 537
[4] ON SILICON-NITRIDE CONDUCTIVITY
GRITSENKO, VA
MEERSON, EE
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (02): : K131 - K134
[5] Excess silicon at the Si3N4/SiO2 interface
Gritsenko, VA
Petrenko, IP
Svitasheva, SN
Wong, H
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (04) : 462 - 464
[6] Electronic structure of amorphous Si3N4: Experiment and numerical simulation
Gritsenko, VA
Morokov, YN
Novikov, YN
[J]. APPLIED SURFACE SCIENCE, 1997, 113 : 417 - 421
[7] GRITSENKO VA, 1988, MIKROELEKTRONIKA, V17, P249
[8] GRITSENKO VA, 1993, STRUCTURE ELECT PROP, P280
[9] GRITSENKO VA, 1981, ROMANOV LETT, V34, P13
[10] GRITSENKO VA, 1986, SOLID STATE PHYS SOV, V28, P3239

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