Wigner crystallization of electrons and holes in amorphous silicon nitride. Antiferromagnetic ordering of localized electrons and holes as a result of a resonance exchange interaction

被引：15

作者：

Gritsenko, VA ^{[1
]}

Milov, AD ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST CHEM KINET & COMBUST,SIBERIAN BRANCH,NOVOSIBIRSK 630090,RUSSIA

来源：

JETP LETTERS | 1996年 / 64卷 / 07期

关键词：

D O I：

10.1134/1.567230

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The predicted quantitative relation between the density and trapping cross section of traps in Si3N4 and the Coulomb repulsion radius in the Wigner crystallization of carriers in localized states is observed experimentally. The absence of ESR for localized electrons and holes in Si3N4 is interpreted on the basis of a model of a resonance exchange interaction of electrons on account of tunneling via localized states. (C) 1996 American Institute of Physics.

引用

页码：531 / 537

页数：7

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