Spintronics - A retrospective and perspective

被引:216
作者
Wolf, SA [1 ]
Chtchelkanova, AY
Treger, DM
机构
[1] Univ Virginia, Dept Phys, Charlottesville, VA 22903 USA
[2] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22903 USA
[3] Strateg Anal Inc, Arlington, VA 22201 USA
关键词
D O I
10.1147/rd.501.0101
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Spintronics is a rapidly emerging field of science and technology that will most likely hare a significant impact on the future of all aspects of electronics as we continue to move into the 21st century. Conventional electronics are based on the charge of the electron. Attempts to use the other fundamental property of an electron, its spin, hare given rise to a new, rapidly, evolving field, known as spintronics, an acronym for spin transport electronics that was first introduced hi 1996 to designate a program of the U.S. Defense Advanced Research Projects Agency (DARPA). Initially the spintronics program involved overseeing the development of advanced magnetic memory and sensors based on spin transport electronics. It was then expanded to included Spins IN Semiconductors (SPINS), in the hope of developing a new paradigm in semiconductor electronics based on the spill degree of freedom of the electron. Studies of spin-polarized transport in bulk and low-dimensional semiconductor structures show promise for the creation of a hybrid device that would combine magnetic storage with gain-in effect, a spin memory transistor. This paper reviews some of the major developments in this field and provides a perspective of what we think will be the future of this exciting field. It is not meant to be a comprehensive review of the whole field but it reflects a bias on the part of the authors toward areas that they believe will lead to significant future technologies.
引用
收藏
页码:101 / 110
页数:10
相关论文
共 66 条
[1]   A 4-Mb 0.18-μm 1T1MTJ toggle MRAM with balanced three input sensing scheme and locally mirrored unidirectional write drivers [J].
Andre, TW ;
Nahas, JJ ;
Subramanian, CK ;
Garni, BJ ;
Lin, HS ;
Omair, A ;
Martino, WL .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (01) :301-309
[2]  
[Anonymous], [No title captured]
[3]  
[Anonymous], IEEE INT SOL STAT CI
[4]  
[Anonymous], 2001, ISSCC FEBR
[5]   GIANT MAGNETORESISTANCE OF (001)FE/(001) CR MAGNETIC SUPERLATTICES [J].
BAIBICH, MN ;
BROTO, JM ;
FERT, A ;
VANDAU, FN ;
PETROFF, F ;
EITENNE, P ;
CREUZET, G ;
FRIEDERICH, A ;
CHAZELAS, J .
PHYSICAL REVIEW LETTERS, 1988, 61 (21) :2472-2475
[6]   Emission of spin waves by a magnetic multilayer traversed by a current [J].
Berger, L .
PHYSICAL REVIEW B, 1996, 54 (13) :9353-9358
[7]   ENHANCED MAGNETORESISTANCE IN LAYERED MAGNETIC-STRUCTURES WITH ANTIFERROMAGNETIC INTERLAYER EXCHANGE [J].
BINASCH, G ;
GRUNBERG, P ;
SAURENBACH, F ;
ZINN, W .
PHYSICAL REVIEW B, 1989, 39 (07) :4828-4830
[8]   A resonant spin lifetime transistor [J].
Cartoixà, X ;
Ting, DZY ;
Chang, YC .
APPLIED PHYSICS LETTERS, 2003, 83 (07) :1462-1464
[9]   Above-room-temperature ferromagnetism in GaSb/Mn digital alloys [J].
Chen, X ;
Na, M ;
Cheon, M ;
Wang, S ;
Luo, H ;
McCombe, BD ;
Liu, X ;
Sasaki, Y ;
Wojtowicz, T ;
Furdyna, JK ;
Potashnik, SJ ;
Schiffer, P .
APPLIED PHYSICS LETTERS, 2002, 81 (03) :511-513
[10]   Room-temperature ferromagnetism in (Zn1-xMnx)GeP2 semiconductors -: art. no. 257203 [J].
Cho, SL ;
Choi, SY ;
Cha, GB ;
Hong, SC ;
Kim, Y ;
Zhao, YJ ;
Freeman, AJ ;
Ketterson, JB ;
Kim, BJ ;
Kim, YC ;
Choi, BC .
PHYSICAL REVIEW LETTERS, 2002, 88 (25) :4-257203