Quasicrystal-related phases in tetrahedral semiconductors:: Structure, disorder, and ab initio calculations

被引:15
作者
Dmitrienko, VE
Kléman, M
Mauri, F
机构
[1] AV Shubnikov Crystallog Inst, Moscow 117333, Russia
[2] Univ Paris 06, Lab Mineral Cristallog, F-75252 Paris 05, France
[3] Univ Paris 07, Lab Mineral Cristallog, F-75252 Paris 05, France
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 13期
关键词
D O I
10.1103/PhysRevB.60.9383
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that special structural changes (phason atomic jumps) can transform the BC8 and R8 phases, known to occur in Si and Ge, into a phase with tetrahedral coordination. These structural changes are analogous to the BC8-R8 transformation, The phase has the body-centered-tetragonal symmetry (the space group C-4h(6)-I4(1)/a) with 16 atoms per unit cell or 8 atoms per primitive cell and will be referred to as BT8. All the atoms occupy equivalent general positions x,y,z and there are three different tetrahedral bonds. It is shown that all three phases, BT8, BC8, and R8 may be considered as a result of phason-ordering transitions from a disordered phase with Ia(3)over bard symmetry. An infinite number of other structures with tetrahedral bonding (ordered and disordered) can be constructed this way. The phason jumps are typical of these phases because they are related to hypothetical icosahedra! quasicrystals. In particular, the BC8 and the recently suggested BC32 structure may be considered as 1/0 and 1/1 cubic approximants of the same quasicrystal. We present a detailed ab initio study of BT8 and BC32 phases in silicon within density-functional theory in the local-density approximation. Our results show that the energetics and diffraction patterns of the BT8 phase are very similar to those of the BC8 and R8 phases. We conclude that the available diffraction data do not exclude the existence of the BT8 phase. In contrast, the energy of the BC32 structure is significantly larger (for positive pressure), and the existence of this phase is therefore questionable. The pressure dependence of the bond lengths, angles, and the lattice parameters of the BT8 phase is investigated. Our estimation of the energy barrier for phason defect formation in the BC8 phase is about 0.12 eV per jumping atom and the energy of the defect is very small (less then 0.02 eV per jumping atom), therefore this type of defect could be present in real samples. Finally, we show that the computed elastic constants of the BC8 phase are almost isotropic as expected for the approximants of icosahedral quasicrystals.
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收藏
页码:9383 / 9389
页数:7
相关论文
共 26 条
[1]   NEW CRYSTALLINE-STRUCTURES FOR SI AND GE [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1985, 32 (10) :6485-6489
[2]   Theoretical stability limit of diamond at ultrahigh pressure [J].
Clark, SJ ;
Ackland, GJ ;
Crain, J .
PHYSICAL REVIEW B, 1995, 52 (21) :15035-15038
[3]   EXOTIC STRUCTURES OF TETRAHEDRAL SEMICONDUCTORS [J].
CRAIN, J ;
ACKLAND, GJ ;
CLARK, SJ .
REPORTS ON PROGRESS IN PHYSICS, 1995, 58 (07) :705-754
[4]   REVERSIBLE PRESSURE-INDUCED STRUCTURAL TRANSITIONS BETWEEN METASTABLE PHASES OF SILICON [J].
CRAIN, J ;
ACKLAND, GJ ;
MACLEAN, JR ;
PILTZ, RO ;
HATTON, PD ;
PAWLEY, GS .
PHYSICAL REVIEW B, 1994, 50 (17) :13043-13046
[5]   Icosahedral order and disorder in semiconductors [J].
Dmitrienko, VE ;
Kléman, M .
PHILOSOPHICAL MAGAZINE LETTERS, 1999, 79 (06) :359-367
[6]  
Hahn T., 1987, INT TABLES CRYSTALLO, VA
[7]   Crystal structure of the high-pressure phase silicon VI [J].
Hanfland, M ;
Schwarz, U ;
Syassen, K ;
Takemura, K .
PHYSICAL REVIEW LETTERS, 1999, 82 (06) :1197-1200
[8]   CRYSTAL DATA FOR HIGH-PRESSURE PHASES OF SILICON [J].
HU, JZ ;
MERKLE, LD ;
MENONI, CS ;
SPAIN, IL .
PHYSICAL REVIEW B, 1986, 34 (07) :4679-4684
[9]   PROPAGATING LOCAL POSITIONAL ORDER IN TETRAHEDRALLY BONDED SYSTEMS [J].
ISHII, Y .
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 1988, 44 :987-998
[10]  
Janot C., 1992, QUASICRYSTALS PRIMER