Theoretical stability limit of diamond at ultrahigh pressure

被引:37
作者
Clark, SJ
Ackland, GJ
Crain, J
机构
[1] Department of Physics and Astronomy, University of Edinburgh
来源
PHYSICAL REVIEW B | 1995年 / 52卷 / 21期
关键词
D O I
10.1103/PhysRevB.52.15035
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Based on density-functional total-energy pseudopotential calculations, we find that diamond structure carbon becomes energetically unstable relative to a highly distorted tetrahedrally coordinated structure at pressures above 5.0 Mbar. This distorted phase has a rhombohedral crystal structure containing eight atoms (denoted as the R8 structure) and has recently been identified experimentally as a pressure-induced metastable phase of silicon. This result has profound implications for ultrahigh pressure experimentation as it places a substantially lower limit on the maximum pressures attainable with diamond-anvil cell technology than was believed to exist previously.
引用
收藏
页码:15035 / 15038
页数:4
相关论文
共 23 条
  • [1] A THEORETICAL-STUDY OF SELENIUM-I UNDER HIGH-PRESSURE
    AKBARZADEH, H
    CLARK, SJ
    ACKLAND, GJ
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (43) : 8065 - 8074
  • [2] STABILITY AND ELECTRONIC-PROPERTIES OF COMPLEX STRUCTURES OF SILICON AND CARBON UNDER PRESSURE - DENSITY-FUNCTIONAL CALCULATIONS
    BISWAS, R
    MARTIN, RM
    NEEDS, RJ
    NIELSEN, OH
    [J]. PHYSICAL REVIEW B, 1987, 35 (18): : 9559 - 9568
  • [3] VERY-LOW ENERGY SURFACE OF SILICON
    CLARK, SJ
    ACKLAND, GJ
    CRAIN, J
    PAYNE, MC
    [J]. PHYSICAL REVIEW B, 1994, 50 (08): : 5728 - 5731
  • [4] EXOTIC STRUCTURES OF TETRAHEDRAL SEMICONDUCTORS
    CRAIN, J
    ACKLAND, GJ
    CLARK, SJ
    [J]. REPORTS ON PROGRESS IN PHYSICS, 1995, 58 (07) : 705 - 754
  • [5] REVERSIBLE PRESSURE-INDUCED STRUCTURAL TRANSITIONS BETWEEN METASTABLE PHASES OF SILICON
    CRAIN, J
    ACKLAND, GJ
    MACLEAN, JR
    PILTZ, RO
    HATTON, PD
    PAWLEY, GS
    [J]. PHYSICAL REVIEW B, 1994, 50 (17): : 13043 - 13046
  • [6] THEORETICAL-STUDY OF HIGH-DENSITY PHASES OF COVALENT SEMICONDUCTORS .1. AB-INITIO TREATMENT
    CRAIN, J
    CLARK, SJ
    ACKLAND, GJ
    PAYNE, MC
    MILMAN, V
    HATTON, PD
    REID, BJ
    [J]. PHYSICAL REVIEW B, 1994, 49 (08): : 5329 - 5340
  • [7] FAHY S, 1987, PHYS REV B, V50, P7389
  • [8] GORINGE C, 1994, THESIS OXFORD
  • [9] DIAMOND ANVIL CELL AND HIGH-PRESSURE PHYSICAL INVESTIGATIONS
    JAYARAMAN, A
    [J]. REVIEWS OF MODERN PHYSICS, 1983, 55 (01) : 65 - 108
  • [10] EFFICACIOUS FORM FOR MODEL PSEUDOPOTENTIALS
    KLEINMAN, L
    BYLANDER, DM
    [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (20) : 1425 - 1428