Cooling performance of integrated thermoelectric microcooler

被引：142

作者：

Min, G ^{[1
]}

Rowe, DM ^{[1
]}

机构：

[1] Univ Wales Coll Cardiff, Sch Engn, Nedo Lab Thermoelect Engn, Cardiff CF1 1XL, S Glam, Wales

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 05期

关键词：

D O I：

10.1016/S0038-1101(99)00045-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical model for calculating the cooling performance of an integrated thermoelectric microcooler (ITM), which takes into account the effects of substrate thermal bypass, convection and radiation heat loads and electrical and thermal contact resistances, is developed based on a recently proposed device configuration. The model is used to obtain the optimum thermoelement length for achieving maximum cooling performance of an ITM. It is concluded that an ITM with adequate cooling performance for microelectronics applications can be made using currently available integrated circuit fabrication technology. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：923 / 929

页数：7

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