Growth of GaN on GaAs(111)B by metalorganic hydrogen chloride VPE using double buffer layer

GaN epitaxial layers were grown by metalorganic hydrogen chloride vapor phase epitaxy (MOH-VPE) using double GaN buffer layers on GaAs substrate. In this method, the first GaN buffer layer was deposited on GaAs(111)B substrate at 550 degrees C, and after annealing at 850 degrees C for 10 min, the second buffer layer was deposited at 500 degrees C. Then the GaN epitaxial layer was grown at 850 degrees C. The X-ray lull width at half maximum (FWHM) value of the obtained hexagonal GaN was smaller than that of a GaN epitaxial layer with a single buffer The room temperature photoluminescence spectra exhibited a strong peak at approximately 361.5 nm.