Surface morphology study for hexagonal GaN grown on GaAs(100) substrates by hydride vapor phase epitaxy

被引：7

作者：

Kimura, A ^{[1
]}

Yamaguchi, AA ^{[1
]}

Sakai, A ^{[1
]}

Sunakawa, H ^{[1
]}

Nido, M ^{[1
]}

Usui, A ^{[1
]}

机构：

[1] NEC CORP LTD, FUNDAMENTAL RES LABS, TSUKUBA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 11B期

关键词：

surface morphology; hexagonal; GaN; GaAs; substrate; hydride vapor phase epitaxy;

D O I：

10.1143/JJAP.35.L1480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface morphology of hexagonal (h-) GaN layers grown by hydride vapor phase epitaxy on GaAs (100) substrates with several misorientation angles and directions was examined. The surface morphology of the h-GaN epitaxial layers was very rough on GaAs (100) exact substrates and GaAs (100) substrates misoriented toward the [111]A direction. The morphology was greatly improved on GaAs (100) substrates misoriented toward the [111]B direction, depending on the misorientation angles. The best surface morphology in our experiment was obtained on GaAs (100) substrates misoriented by 15.8 degrees toward the [111]B direction. It was also found that a Ga-rich surface was favorable for GaN growth with good morphology.

引用

页码：L1480 / L1482

页数：3

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