HIGH-POWER GAN P-N-JUNCTION BLUE-LIGHT-EMITTING DIODES

被引：728

作者：

NAKAMURA, S

MUKAI, T

SENOH, M

机构：

[1] Nichia Chemical Industries Ltd, Kaminaka, Anan, Tokushima, 774

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 12A期

关键词：

GAN; BUFFER LAYER; P-N JUNCTION LED; OUTPUT POWER; EXTERNAL QUANTUM EFFICIENCY; FORWARD VOLTAGE;

D O I：

10.1143/JJAP.30.L1998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-power p-n junction blue-light-emitting diodes (LEDs) were fabricated using GaN films grown with GaN buffer layers. The external quantum efficiency was as high as 0.18%. Output power was almost 10 times higher than that of conventional 8-mcd SiC blue LEDs. The forward voltage was as low as 4 V at a forward Current of 20 mA. This forward voltage is the lowest ever reported for GaN LEDs. The peak wavelength and the full width at half-maximum (FWHM) of GaN LEDs were 430 nm and 55 nm, respectively.

引用

页码：L1998 / L2001

页数：4

共 11 条

[1] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].