NOVEL METALORGANIC CHEMICAL VAPOR-DEPOSITION SYSTEM FOR GAN GROWTH

被引：320

作者：

NAKAMURA, S

HARADA, Y

SENO, M

机构：

[1] Nichia Chemical Industries Ltd., Kaminaka, Anan, Tokushima 774

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 18期

关键词：

D O I：

10.1063/1.105239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel metalorganic chemical vapor deposition (MOCVD) system, which has two different flows, has been developed. One flow carries a reactant gas parallel to the substrate, and the other an inactive gas perpendicular to the substrate for the purpose of changing the direction of the reactant gas flow. The growth of a GaN film was attempted using this system, and a high quality, uniform film was obtained over a 2 in. sapphire substrate. The carrier concentration and Hall mobility are 1 x 10(18)/cm3 and 200 cm2/V s, respectively, which are the highest for GaN films grown directly on a sapphire substrate by the MOCVD method.

引用

页码：2021 / 2023

页数：3

共 5 条

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