EPITAXIAL-GROWTH AND PROPERTIES OF ALXGA1-XN BY MOVPE

被引:71
作者
KOIDE, Y [1 ]
ITOH, H [1 ]
SAWAKI, N [1 ]
AKASAKI, I [1 ]
HASHIMOTO, M [1 ]
机构
[1] TOYOTA CENT RES & DEV LABS INC,AICHI 48011,JAPAN
关键词
D O I
10.1149/1.2109056
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1956 / 1960
页数:5
相关论文
共 19 条
[1]  
AMANO H, UNPUB APPL PHYS LETT
[2]   GROWTH AND PROPERTIES OF ALXGA1-XN EPITAXIAL LAYERS [J].
BARANOV, B ;
DAWERITZ, L ;
GUTAN, VB ;
JUNGK, G ;
NEUMANN, H ;
RAIDT, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (02) :629-636
[3]   OM VPE GROWTH OF AIGASB AND ALGAASSB [J].
COOPER, CB ;
SAXENA, RR ;
LUDOWISE, MJ .
ELECTRONICS LETTERS, 1980, 16 (23) :892-893
[4]  
Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163
[5]   GROWTH AND PROPERTIES OF GAXAL1-XN COMPOUNDS [J].
HAGEN, J ;
METCALFE, RD ;
WICKENDEN, D ;
CLARK, W .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (04) :L143-L146
[6]   EFFECTS OF HYDROGEN IN AN AMBIENT ON THE CRYSTAL-GROWTH OF GAN USING GA(CH3)3 AND NH3 [J].
HASHIMOTO, M ;
AMANO, H ;
SAWAKI, N ;
AKASAKI, I .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :163-168
[7]   PROPERTIES AND ION-IMPLANTATION OF ALXGA1-XN EPITAXIAL SINGLE-CRYSTAL FILMS PREPARED BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
KHAN, MA ;
SKOGMAN, RA ;
SCHULZE, RG ;
GERSHENZON, M .
APPLIED PHYSICS LETTERS, 1983, 43 (05) :492-494
[8]  
KHAN MRH, UNPUB SOLID STATE CO
[9]   THE GROWTH AND CHARACTERIZATION OF UNIFORM GA1-XINXAS (X LESS-THAN-OR-EQUAL-TO .25) BY ORGANO-METALLIC VPE [J].
LUDOWISE, MJ ;
COOPER, CB ;
SAXENA, RR .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) :1051-1068
[10]   USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J].
MANASEVIT, HM ;
ERDMANN, FM ;
SIMPSON, WI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1864-+