Single domain hexagonal GaN films on GaAs(100) vicinal substrates grown by hydride vapor phase epitaxy

被引：18

作者：

Yamaguchi, AA ^{[1
]}

Manako, T ^{[1
]}

Sakai, A ^{[1
]}

Sunakawa, H ^{[1
]}

Kimura, A ^{[1
]}

Nido, M ^{[1
]}

Usui, A ^{[1
]}

机构：

[1] NEC CORP LTD,OPTOELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 7B期

关键词：

GaN; GaAs; hexagonal; cubic; vapor phase epitaxy; X-ray diffraction; substrate misorientation;

D O I：

10.1143/JJAP.35.L873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hexagonal GaN (h-GaN) films are grown on GaAs (100) vicinal substrates by hydride vapor phase epitaxy, The substrate misorientation dependence of the crystal structure is investigated by X-ray diffraction measurements using a 4-circle diffractometer. It is found that misorientation toward the [111]B direction is essential for the growth of single domain h-GaN films and that the c-axis of the single domain h-GaN orients to the GaAs [111]B direction.

引用

页码：L873 / L875

页数：3

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