Nitrogen acceptors confined in CdZnTe quantum well structures

被引:8
作者
Zhao, QX
Baron, T
Saminadayar, K
Magnea, N
机构
[1] CEA,DEPT RECH FONDAMENTALE MAT CONDENSEE,F-38054 GRENOBLE 9,FRANCE
[2] UNIV GRENOBLE 1,CNRS,SPECTROMETRIE PHYS LAB,F-38042 GRENOBLE 9,FRANCE
关键词
D O I
10.1063/1.361063
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nitrogen accepters confined in a CdZnTe single quantum well, grown by molecular beam epitaxy, are investigated by different optical methods. The transitions related to nitrogen accepters confined in the well are observed in the doping range between 10(17) and 10(18)/cm(3). The temperature and excitation intensity dependence of the nitrogen-related transitions in photoluminescence spectra indicates that these transitions correspond to the nitrogen acceptor bound excitons and to free electron to neutral nitrogen acceptor recombination. The binding energy of nitrogen accepters confined in an 130-Angstrom-wide Cd0.96Zn0.04Te/Cd0.86Zn0.12Te structure is deduced to be 51.7+/-0.5 meV from this study. (C) 1996 American Institute of Physics.
引用
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页码:2070 / 2073
页数:4
相关论文
共 16 条
  • [1] PLASMA NITROGEN DOPING OF ZNTE, CD1-XZNXTE, AND CDTE BY MOLECULAR-BEAM EPITAXY
    BARON, T
    TATARENKO, S
    SAMINADAYAR, K
    MAGNEA, N
    FONTENILLE, J
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (10) : 1284 - 1286
  • [2] INDIUM DOPING OF CDTE AND CD1-XZNXTE BY MOLECULAR-BEAM EPITAXY - UNIFORMLY AND PLANAR-DOPED LAYERS, QUANTUM-WELLS, AND SUPERLATTICES
    BASSANI, F
    TATARENKO, S
    SAMINADAYAR, K
    MAGNEA, N
    COX, RT
    TARDOT, A
    GRATTEPAIN, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) : 2927 - 2940
  • [3] EXCITON BINDING-ENERGY IN QUANTUM WELLS
    BASTARD, G
    MENDEZ, EE
    CHANG, LL
    ESAKI, L
    [J]. PHYSICAL REVIEW B, 1982, 26 (04): : 1974 - 1979
  • [4] SPECTROSCOPIC STUDY OF CDTE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON (001) AND (111) CD0.96ZN0.04 TE SUBSTRATES
    DALBO, F
    LENTZ, G
    MAGNEA, N
    MARIETTE, H
    DANG, LS
    PAUTRAT, JL
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (03) : 1338 - 1346
  • [5] PHOTOLUMINESCENCE AND P-TYPE CONDUCTIVITY IN CDTE-N GROWN BY MOLECULAR-BEAM EPITAXY
    DHESE, KA
    DEVINE, P
    ASHENFORD, DE
    NICHOLLS, JE
    SCOTT, CG
    SANDS, D
    LUNN, B
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) : 5423 - 5428
  • [6] SPECTROSCOPIC STUDY OF AN ACCEPTOR CONFINED IN A NARROW GAAS/ALXGA1-XAS QUANTUM WELL
    HOLTZ, PO
    SUNDARAM, M
    SIMES, R
    MERZ, JL
    GOSSARD, AC
    ENGLISH, JH
    [J]. PHYSICAL REVIEW B, 1989, 39 (18): : 13293 - 13301
  • [7] SPECTROSCOPIC STUDY OF THE EFFECT OF CONFINEMENT ON SHALLOW ACCEPTOR STATES IN GAAS/ALXGA1-XAS QUANTUM WELLS
    HOLTZ, PO
    SUNDARAM, M
    DOUGHTY, K
    MERZ, JL
    GOSSARD, AC
    [J]. PHYSICAL REVIEW B, 1989, 40 (18): : 12338 - 12345
  • [8] OBSERVATION OF NEGATIVELY CHARGED EXCITONS X- IN SEMICONDUCTOR QUANTUM-WELLS
    KHENG, K
    COX, RT
    DAUBIGNE, YM
    BASSANI, F
    SAMINADAYAR, K
    TATARENKO, S
    [J]. PHYSICAL REVIEW LETTERS, 1993, 71 (11) : 1752 - 1755
  • [9] LOEHR JP, 1990, 20TH P INT C PHYS SE, V2, P104
  • [10] PHOTO-LUMINESCENCE STUDIES IN N, P, ARSENIC IMPLANTED CADMIUM TELLURIDE
    MOLVA, E
    SAMINADAYAR, K
    PAUTRAT, JL
    LIGEON, E
    [J]. SOLID STATE COMMUNICATIONS, 1983, 48 (11) : 955 - 960