Photostimulated trap filling in Lu2SiO5:Ce3+

被引:23
作者
Dorenbos, P [1 ]
Bos, AJJ [1 ]
van Eijk, CWE [1 ]
机构
[1] Delft Univ Technol, Interfac Reactor Inst, NL-2629 JB Delft, Netherlands
关键词
D O I
10.1088/0953-8984/14/4/105
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Upon exposing Lu2SiO5:Ce3+ scintillators to daylight, the material shows undesired intense afterglow lasting for several hours at room temperature. This effect is studied by means of illuminating Lu2SiO5:Ce3+ with visible and ultraviolet light. Conditions for trap filling and the relation with photoconductivity phenomena and Ce3+ luminescence quenching will be discussed. Autoionization of so-called Ce2 centres following the excitation to the lowest 5d level seems to play an important role in the mechanism.
引用
收藏
页码:L99 / L101
页数:3
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