One-dimensional heterostructures in semiconductor nanowhiskers

被引：565

作者：

Björk, MT ^{[1
]}

Ohlsson, BJ ^{[1
]}

Sass, T ^{[1
]}

Persson, AI ^{[1
]}

Thelander, C ^{[1
]}

Magnusson, MH ^{[1
]}

Deppert, K ^{[1
]}

Wallenberg, LR ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Lund Univ, Solid State Phys Nanometer Consortium, S-22100 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 06期

关键词：

D O I：

10.1063/1.1447312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore. (C) 2002 American Institute of Physics.

引用

页码：1058 / 1060

页数：3

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