Metallization schemes for dielectric thin film capacitors

被引:27
作者
AlShareef, HN
Dimos, D
Tuttle, BA
Raymond, MV
机构
[1] Sandia National Laboratories, Albuquerque
关键词
D O I
10.1557/JMR.1997.0050
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A detailed analysis of Pt/Ti, Pt/TiO2, and Pt/ZrO2 electrodes was carried out to develop a bottom electrode stack for sol-gel derived thin him capacitors. For the Pt/Ti stack, the choice of layer thickness and deposition temperature is found to affect adhesion to the SiO2/Si substrate as well as the extent of hillock formation and Pt-Ti interaction. By using elevated temperature deposition, Pt films close to 1 mu m in thickness can be produced with relatively good adhesion and morphological stability using Ti adhesion layers. In addition, Pt films grown on ZrO2 and TiO2 adhesion layers exhibit little morphological change and no degradation in sheet resistance after annealing at 650 degrees C. However, neither ZrO2 nor TiO2 are as effective as Ti metal in promoting Pt adhesion. Experiments aimed at establishing a correlation between hillock formation and capacitor yield revealed two important results. First, the behavior of Pt/Ti stacks during annealing in air is markedly different from their behavior during PZT him crystallization. Second, preannealing of the Pt/Ti in air prior to PZT film growth actually improves capacitor yield, even though hillock formation occurs during the preannealing treatment. Implications of these results regarding the role of hillocks in controlling capacitor yield are discussed.
引用
收藏
页码:347 / 354
页数:8
相关论文
共 11 条
[1]  
ALSHAREEF HN, 1993, INTEGR FERROELECTR, V3, P259
[2]  
BRUCHHAUS R, 1992, MATER RES SOC S P, V243, P123
[3]   METALLURGICAL TOPICS IN SILICON DEVICE INTERCONNECTIONS - THIN-FILM STRESSES [J].
DHEURLE, FM .
INTERNATIONAL MATERIALS REVIEWS, 1989, 34 (02) :53-68
[4]  
Eichorst D. J., 1994, Integrated Ferroelectrics, V4, P239, DOI 10.1080/10584589408017027
[5]  
Hren P. D., 1992, Integrated Ferroelectrics, V2, P311, DOI 10.1080/10584589208215751
[6]   EFFECTS OF ANNEAL AMBIENTS AND PT THICKNESS ON PT/TI AND PT/TI/TIN INTERFACIAL REACTIONS [J].
OLOWOLAFE, JO ;
JONES, RE ;
CAMPBELL, AC ;
HEGDE, RI ;
MOGAB, CJ ;
GREGORY, RB .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) :1764-1772
[7]   MICROSTRUCTURES AND INTERDIFFUSIONS OF PT/TI ELECTRODES WITH RESPECT TO ANNEALING IN THE OXYGEN AMBIENT [J].
PARK, KH ;
KIM, CY ;
JEONG, YW ;
KWON, HJ ;
KIM, KY ;
LEE, JS ;
KIM, ST .
JOURNAL OF MATERIALS RESEARCH, 1995, 10 (07) :1790-1794
[8]  
SCHWARTZ RW, 1992, MATER RES SOC S P, V243, P245
[9]   INVESTIGATION OF PT/TI BILAYER METALLIZATION ON SILICON FOR FERROELECTRIC THIN-FILM INTEGRATION [J].
SREENIVAS, K ;
REANEY, I ;
MAEDER, T ;
SETTER, N ;
JAGADISH, C ;
ELLIMAN, RG .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) :232-239
[10]  
SUMMERFELT SR, 1995, MATER RES SOC SYMP P, V361, P257, DOI 10.1557/PROC-361-257