Formation of island chains in SiGe/Si heteroepitaxy by elastic anisotropy -: art. no. 245307

被引：54

作者：

Meixner, M

Schöll, E

Schmidbauer, M

Raidt, H

Köhler, R

机构：

[1] Tech Univ Berlin, Inst Theoret Phys, D-10623 Berlin, Germany

[2] Humboldt Univ, Inst Phys, AG Rontgenbeugung, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.64.245307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In LPE-grown semiconductor samples the formation of self-assembled nanoscale island chains along the elastically soft <100> directions can be observed. We explain this process of self-organization by a kinetic Monte Carlo simulation of the Stranski-Krastanow growth mode, incorporating in a self-consistent way the anisotropic strain field around the nanoscale islands.

引用

收藏

页码：2453071 / 2453074

页数：4

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