Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots

被引：95

作者：

Eisele, H

Flebbe, O

Kalka, T

Preinesberger, C

Heinrichsdorff, F

Krost, A

Bimberg, D

Dähne-Prietsch, M

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Otto Von Guericke Univ, D-39016 Magdeburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 01期

关键词：

D O I：

10.1063/1.124290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present cross-sectional scanning-tunneling microscopy results of threefold stacked InAs quantum dots prepared by metal-organic chemical-vapor deposition at 485 degrees C and a growth rate of 0.18 nm/s. The dots consist of stoichiometrically pure InAs and show a layer-dependent size. The images indicate a prismatic dot shape with {101} and additional {111} side faces as well as a (001) top face. (C) 1999 American Institute of Physics. [S0003-6951(99)04227-8].

引用

页码：106 / 108

页数：3

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