ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS

被引:658
作者
GRUNDMANN, M
CHRISTEN, J
LEDENTSOV, NN
BOHRER, J
BIMBERG, D
RUVIMOV, SS
WERNER, P
RICHTER, U
GOSELE, U
HEYDENREICH, J
USTINOV, VM
EGOROV, AY
ZHUKOV, AE
KOPEV, PS
ALFEROV, ZI
机构
[1] MAX PLANCK INST MIKROSTRUKTURPHYS,D-06120 HALLE,GERMANY
[2] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA
[3] OTTO VON GUERICKE UNIV,D-39016 MAGDEBURG,GERMANY
关键词
D O I
10.1103/PhysRevLett.74.4043
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report ultranarrow (<0.15 meV) cathodoluminescence lines originating from single InAs quantum dots in a GaAs matrix for temperatures up to 50 K, directly proving their -function-like density of electronic states. The quantum dots have been prepared by molecular beam epitaxy utilizing a strain-induced self-organizing mechanism. A narrow dot size distribution of width 121 nm is imaged by plan-view transmission electron microscopy. Cathodoluminescence images directly visualize individual dot positions and recombination from a single dot. A dense dot array (1011 dots/cm2) gives rise to a distinct absorption peak which almost coincides with the luminescence maximum. © 1995 The American Physical Society.
引用
收藏
页码:4043 / 4046
页数:4
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