Guiding Crystallization around Bends and Sharp Corners

被引：61

作者：

Lee, Stephanie S. ^{[1
]}

Tang, Samuel B. ^{[1
]}

Smilgies, Detlef-M ^{[2
]}

Woll, Arthur R. ^{[2
]}

Loth, Marsha A. ^{[3
]}

Mativetsky, Jeffrey M. ^{[1
]}

Anthony, John E. ^{[3
]}

Loo, Yueh-Lin ^{[1
]}

机构：

[1] Princeton Univ, Dept Chem & Biol Engn, Princeton, NJ 08544 USA

[2] Cornell Univ, Cornell High Energy Synchrotron Source, Ithaca, NY 14853 USA

[3] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 20期

基金：

美国国家科学基金会;

关键词：

directed crystallization; spherulite; solvent-vapor annealing; organic thin films; THIN-FILM TRANSISTORS; BLOCK-COPOLYMERS; TRIETHYLSILYLETHYNYL ANTHRADITHIOPHENE; SPHERULITIC CRYSTALLIZATION; EPITAXIAL CRYSTALLIZATION; ORGANIC SEMICONDUCTORS; ORIENTATION; PERFORMANCE; SUBSTRATE; TRANSPORT;

D O I：

10.1002/adma.201104619

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Control over the molecular orientation in organic thin films is demonstrated with precise in-plane spatial resolution over large areas. By exploiting the differential crystallization rates on substrates with different surface energies, the radial symmetry of spherulitic growth can be disrupted by preferentially selecting the molecular orientations that promote growth along the paths of the underlying patterns. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2692 / 2698

页数：7

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