Improving organic thin-film transistor performance through solvent-vapor annealing of solution-processable triethylsilylethynyl anthradithiophene

被引：381

作者：

Dickey, Kimberly C.

Anthony, John E.

Loo, Yueh-Lin ^{[1
]}

机构：

[1] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA

[2] Univ Texas, Ctr Nano & Mol Sci & Technol, Austin, TX 78712 USA

[3] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 13期

关键词：

D O I：

10.1002/adma.200600188

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The current-voltage characteristics of triethylsilylethynyl anthradithiophene (TES ADT) thin-film transistors can be improved dramatically by a simple and straightforward solvent-vapor annealing process after device fabrication. Exposing the transistors to dichloroethane vapor for 2 min induces structural rearrangement and crystallization of TES ADT (see figure and cover). This procedure results in drastic increases in on currents; the saturation mobility increases by two orders of magnitude and the current-voltage hysteresis is largely eliminated.

引用

页码：1721 / +

页数：7

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