A spin Esaki diode

被引：115

作者：

Kohda, M ^{[1
]}

Ohno, Y ^{[1
]}

Takamura, K ^{[1
]}

Matsukura, F ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 12A期

关键词：

spin injection; (Ga; Mn)As; Esaki diode; light emitting diode; ferromagnetic semiconductor;

D O I：

10.1143/JJAP.40.L1274

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate electrical electron spin injection ia interband tunneling, in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p(+)-(Ga.Mn)As and no nonmagnetic n(+)-GaAs under reverse-bias allows spin-polarized tunneling of electrons from the valence band of (Ga, Mn) As to the conduction band of n(-) -GaAs. The spin polarization of tunneled electrons is probed by circular polarization of electroluminescence (EL) from all n-GaAs/InGaAs/ p-GaAs light emitting structure integrated with the diode. Clear hysteresis loop with +/-6.5% remanence is observed in the magnetic-field dependence of the EL polarization at 6K, below the curie temperature of(Ga,Mn)As.

引用

页码：L1274 / L1276

页数：3

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