Growth of PbS thin films on silicon substrate by SILAR technique

Lead sulfide thin films were grown on (100)Si and (111)Si crystalline substrates by successive ionic layer adsorption and reaction, (SILAR), technique from solution phase at room temperature and normal pressure. The stress development. crystallinity and crystallite size, morphology and roughness and composition of the films were characterized as a function of the film thickness. The PbS thin films were polycrystalline and cubic. The residual stress in PbS was tensile and changed depending on the growth mode and thickness of the PbS films. (C) 2002 Elsevier Science B.V All fights reserved.