High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN

被引：9

作者：

Shima, T ^{[1
]}

Kimura, S ^{[1
]}

Iida, T ^{[1
]}

Obara, A ^{[1
]}

Makita, Y ^{[1
]}

Kudo, K ^{[1
]}

Tanaka, K ^{[1
]}

机构：

[1] CHIBA UNIV, CHIBA 263, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 118卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)01112-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Nitrogen atoms were introduced into liquid encapsulated Czochralski (LEG) grown GaAs substrates for the nitrogen concentration ([NI) range of 1 X 10(18) cm(-3) to 1 X 10(22) cm(-3) by high-energy (400 keV) ion implantation. For heat treatment, both furnace annealing (FA) and rapid thermal annealing (RTA) were adopted. Novel emissions denoted by N-i (i = 1-5), were observed in the 2 K photoluminescence (PL) spectra of FA samples with [N] higher than 2 X 10(21) cm-(3). An emission at around 1.30 eV denoted by N-5 or N-5', were suggested to be related with the band gap energies of GaAs1-xNx alloys, which was predicted by a theory on the band gap bowing of this alloy system. Based on this empirical model, we estimated the amount of nitrogen x to be around 0.018.

引用

页码：743 / 747

页数：5

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