The correlation of dimensionality with emitted wavelength and ordering of freshly produced porous silicon

被引:59
作者
Zhang, Q
Bayliss, SC
机构
[1] Department of Applied Physics, School of Applied Science, De Montfort University
关键词
D O I
10.1063/1.361032
中图分类号
O59 [应用物理学];
学科分类号
摘要
Freshly produced red, yellow and green emitting porous Si specimens have been studied by NEXAFS and EXAFS (near edge and extended x-ray absorption fine structure). The emission peaks are at 690, 580, and 520 nm, which almost covers the full visible range that direct anodization can achieve. The correlation between the co-ordination numbers of the first, second and third Si neighbor shells from Fourier transform fitting of EXAFS and both emission peak energies and optical band gaps estimated by PLE (photoluminescence excitation dependence) suggests that the nanostructures of the PS are nanowires, rather than nanocrystalline. Two types of quantum nanowire with one and one-plus-a-fraction dimensionality are proposed to interpret the correlation. The order factors of the theoretical fits suggest the nanowires of the freshly produced PS have crystalline cores. (C) 1996 American Institute of Physics.
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页码:1351 / 1356
页数:6
相关论文
共 32 条
[1]   LOCAL-STRUCTURE OF POROUS SILICON [J].
BAYLISS, SC ;
HUTT, DA ;
ZHANG, Q ;
DANSON, N ;
SMITH, A .
SOLID STATE COMMUNICATIONS, 1994, 91 (05) :371-375
[2]  
BAYLISS SC, 1994, J APPL PHYS, V76, P9
[3]   FURTHER EVIDENCE FOR QUANTUM CONFINEMENT IN POROUS SILICON [J].
BEHRENSMEIER, R ;
NAMAVAR, F ;
AMISOLA, GB ;
OTTER, FA ;
GALLIGAN, JM .
APPLIED PHYSICS LETTERS, 1993, 62 (19) :2408-2410
[4]   A MICROSTRUCTURAL STUDY OF POROUS SILICON [J].
BERBEZIER, I ;
HALIMAOUI, A .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (09) :5421-5425
[5]  
BINSTED N, 1992, SERC EXCUV92 DAR LAB
[6]   THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].
BRANDT, MS ;
FUCHS, HD ;
STUTZMANN, M ;
WEBER, J ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312
[7]  
BUUREN TV, 1992, APPL PHYS LETT, V60, P3013
[8]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[9]   THEORY OF THE LUMINESCENCE OF POROUS SILICON [J].
DELERUE, C ;
LANNOO, M ;
ALLAN, G .
JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) :249-256
[10]  
EROIL A, 1988, PHYS REV B, V37, P2450