The study of aging mechanism in ZnS:Mn thin-film electroluminescent devices grown by MOCVD

被引：22

作者：

Wang, CW ^{[1
]}

Sheu, TJ ^{[1
]}

Su, YK ^{[1
]}

Yokoyama, M ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV, DEPT ELECT ENGN, TAINAN 70101, TAIWAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 113卷

关键词：

D O I：

10.1016/S0169-4332(96)00931-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Evidence from DLTS and FTIR measurements strongly supports the assertion that the degradation mechanism of ZnS:Mn ACTFEL devices is mainly due to the deep electron trap, E-t, which comes from the Mn activators reacting with surface water molecules. The photoluminescence measurements reveal that the Mn-related E-t trap behaves like a nonradiative center. As a result, poor brightness characteristics including lower brightness and a higher threshold voltage were obtained when samples become aged.

引用

页码：709 / 713

页数：5

共 16 条

[1] AGING STUDIES OF ATOMIC LAYER EPITAXY ZNS-MN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES [J].