A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance

被引：83

作者：

Alam, MA ^{[1
]}

Weir, BE ^{[1
]}

Silverman, PJ ^{[1
]}

机构：

[1] Agere Syst, Murray Hill, NJ 07974 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 02期

关键词：

hard breakdown; MOS devices; reliability; semiconductor device modeling; soft breakdown;

D O I：

10.1109/16.981212

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theory of the statistical origin of soft and hard breakdown, that can explain a wide range of experimental data, is proposed. The theory is based on the simple premise that the severity of breakdown depends on the magnitude of the power dissipation through the sample-specific, statistically distributed percolation conductance, rather than on any physical difference between the traps involved. This model (a) establishes the connection between the statistical distribution of the theoretically predicted percolation conductance and the distribution of experimentally measured conductances after soft breakdown (Part I), and (b) explains the thickness, voltage, stress, and circuit configuration dependence of soft and hard breakdown (Part II). Connections to previous theories are made explicit, and contradictions to alternate models are resolved.

引用

页码：232 / 238

页数：7

共 35 条

[1]

ALAM M, 2000, P INT REL PHYS S, P21

[2]

Alam M. A., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P715, DOI 10.1109/IEDM.1999.824251

[3]

Alam M. A., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P449, DOI 10.1109/IEDM.1999.824190

[4] A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling [J].