8-9 and 14-15 μm two-color 640x486 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) focal plane array camera

被引：42

作者：

Gunapala, SD ^{[1
]}

Bandara, SV ^{[1
]}

Singh, A ^{[1
]}

Liu, JK ^{[1
]}

Rafol, SB ^{[1
]}

Luong, EM ^{[1
]}

Mumolo, JM ^{[1
]}

Tran, NQ ^{[1
]}

Vincent, JD ^{[1
]}

Shott, CA ^{[1
]}

Long, J ^{[1
]}

LeVan, PD ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Ctr Space Microelect Technol, Pasadena, CA 91109 USA

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXV | 1999年 / 3698卷

关键词：

D O I：

10.1117/12.354502

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An optimized long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE). This wafer was processed into several 640x486 format monolithically integrated 8-9 and 14-15 mu m two-color (or dual wavelength) QWIP focal plane arrays (FPAs). These FPAs were then hybridized to 640x486 silicon CMOS readout multiplexers. A thinned (i.e., substrate removed) FPA hybrid was integrated into a liquid helium cooled dewar to perform electrical and optical characterization and to demonstrate simultaneous two-color imagery. The 8-9 mu m detectors in the FPA have shown background limited performance (BLIP) at 70 K operating temperature, at 300 K background with f/2 cold stop. The 14-15 mu m detectors of the FPA have reached BLIP at 40 K operating temperature at the same background conditions. In this paper we discuss the performance of this long-wavelength dualband QWIP FPA in quantum efficiency, detectivity, noise equivalent temperature difference (NE Delta T), uniformity, and operability.

引用

页码：687 / 697

页数：11

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