New Host Containing Bipolar Carrier Transport Moiety for High-Efficiency Electrophosphorescence at Low Voltages

被引：139

作者：

Gao, Zhi Qiang ^{[1
,5
]}

Luo, Meiming ^{[2
,5
]}

Sun, Xiao Hua ^{[2
,5
]}

Tam, Hoi Lam ^{[3
,5
]}

Wong, Man Shing ^{[2
,5
]}

Mi, Bao Xiu ^{[1
]}

Xia, Ping Fang ^{[2
,5
]}

Cheah, Kok Wai ^{[3
,5
]}

Chen, Chin Hsin ^{[4
]}

机构：

[1] Nanjing Univ Posts & Telecommun Nanjing, Inst Adv Mat, Nanjing, Peoples R China

[2] Hong Kong Baptist Univ, Dept Chem, Hong Kong, Hong Kong, Peoples R China

[3] Hong Kong Baptist Univ, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[4] Natl Chiao Tung Univ, Microelect & Informat Syst Res Ctr, Hsinchu, Taiwan

[5] Hong Kong Baptist Univ, Ctr Adv Luminescence Mat, Hong Kong, Hong Kong, Peoples R China

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 06期

关键词：

LIGHT-EMITTING-DIODES; CYCLOMETALATED IRIDIUM COMPLEXES; TRIPLET ENERGY; DEVICES; EMISSION;

D O I：

10.1002/adma.200702877

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new host material for use in phosphorescent OLEDs with desirable electronic properties has been synthesized. The material exhibits superior carrier-transport properties, a narrow optical band gap, relatively high triplet energy, and high thermal stability. It is synthesized by integrating hole-transporting carbazole groups into an electron-transporting phenanthroline core (see figure), and is demonstrated to be an excellent host for phosphorescent dopant emitters.

引用

页码：688 / +

页数：6

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