High-efficiency and low-voltage p-i-n electrophosphorescent organic light-emitting diodes with double-emission layers

被引:571
作者
He, GF [1 ]
Pfeiffer, M
Leo, K
Hofmann, M
Birnstock, J
Pudzich, R
Salbeck, J
机构
[1] Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany
[2] Novaled GmbH, D-01069 Dresden, Germany
[3] Univ Kassel, D-34109 Kassel, Germany
关键词
D O I
10.1063/1.1812378
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate high-efficiency organic light-emitting diodes by incorporating a double-emission layer (D-EML) into p-i-n-type cell architecture. The D-EML is comprised of two layers with ambipolar transport characteristics, both doped with the green phosphorescent dye tris(phenylpyridine)iridium. The D-EML system of two bipolar layers leads to an expansion of the exciton generation region. Due to its self-balancing character, accumulation of charge carriers at the outer interfaces is avoided. Thus, a power efficiency of approximately 77 lm/W and an external quantum efficiency of 19.3% are achieved at 100 cd/m(2) with an operating voltage of only 2.65 V. More importantly, the efficiency decays only weakly with increasing brightness, and a power efficiency of 50 lm/W is still obtained even at 4000 cd/m(2). (C) 2004 American Institute of Physics.
引用
收藏
页码:3911 / 3913
页数:3
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